NTE235 Silicon NPN Transistor Final RF Power Output
Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage (RBE = 150), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Collector Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W TC = +50C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TC =+25C unless otherwise specified)
Parameter Symbol Test Conditions Min 80 75 5 - - 25 - - 100 - 4.0 60 Typ Max Unit - - - - - - 0.15 0.9 150 45 - - - - - 10 10 200 0.6 1.2 - 60 - - V V MHz pF W % V V V A A Collector-Base Breakdown Voltage V(BR)CBO IC = 100A, IB = 0 Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacitance Power Output Collector Efficiency V(BR)EBO IE = 100A, IC = 0 ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob PO VCB = 40V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 500mA IC = 1A, IB = 100mA IC = 1A, IB = 100mA VCE = 10V, IC = 100mA VCB = 10V, f = 1MHz VCC = 12V, Pin = 0.2W, f = 27MHz
.420 (10.67) Max .110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Base .100 (2.54)
Emitter Collector/Tab
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